Research on Steam Oxidation Resistance of Si3N4-bonded SiC Refractories

doi:10.19691/j.cnki.1004-4493.2020.01.009

China's Refractories ›› 2020, Vol. 29 ›› Issue (1): 44-47.DOI: 10.19691/j.cnki.1004-4493.2020.01.009

• Original article • Previous Articles

Research on Steam Oxidation Resistance of Si₃N₄-bonded SiC Refractories

CAO Huiyan^*(), HUANG Zhigang, ZHANG Xinhua, LIU Zhen

State Key Laboratory of Advanced Refractories, Sinosteel Luoyang Institute of Refractories Research Co., Ltd., Luoyang 471039, China

Online:2020-01-10 Published:2020-01-10
Contact: CAO Huiyan
About author:Cao Huiyan, born in 1982, obtained her master’s degree in 2008. Since then, she has been working in Sinosteel Luoyang Institute of Refractories Research Co., Ltd. She is skilled in technical services and engineering guidance for SiC refractories for blast furnaces, CDQ, heat treatment Muffle furnaces, and ceramic slurry pump. She has authored and co-authored about 30 papers.

Abstract

Abstract:

The steam oxidation of Si₃N₄-bonded SiC was determined at 1 000 ℃ for 50, 100, 150, 200, 250 and 300 h, respectively, according to ASTM C863-2000. The evolution of the phase composition and the microstructure as well as their relationship was investigated by XRD and SEM. The results show that the oxidation rate of Si₃N₄-bonded SiC is periodic. The presence of nitrogen element can impede the crystallization of SiO₂ glass; the local enrichment of CaO impurities is unfavorable for the existence of fibrous SiO₂. SiO₂ mainly exists as cristobalite when the CaO/SiO₂ ratio reaches a suitable level, but gradually transforms to quartz along with the oxidation time when the SiO₂ content increases, or the CaO/SiO₂ ratio decreases, due to the insufficient mineralization of CaO. The crystallization of SiO₂ glass, especially the formation of quartz is the key factor leading to the volume expansion and structural stress. When the cracks extend and reach the surface, the degradation of the material accelerates.

Key words: silicon nitride-bonded silicon carbide, steam oxidation resistance, phase composition, microstructure

CAO Huiyan, HUANG Zhigang, ZHANG Xinhua, LIU Zhen. Research on Steam Oxidation Resistance of Si₃N₄-bonded SiC Refractories[J]. China's Refractories, 2020, 29(1): 44-47.

Figures/Tables 11

Table 1 Experimental formulation

Starting materials	Particle size	mass%
SiC	1.43-2.5 mm	15
	0.5-1.43 mm	40
	0-0.5 mm	15
	≤0.044 mm	15
Si	≤0.044 mm	15

Fig. 1 Appearance of samples after oxidation

Fig. 2 Mass and volume change rates of samples after different oxidation durations

Fig. 3 Open porosity of samples after different oxidation durations

Fig. 4 XRD spectra of samples after different oxidation durations

Table 2 Phase composition of samples after different oxidation durations /mass%

Duration /h	Si₂N₂O	α-Si₃N₄	β-Si₃N₄	Cristobalite	Quartz	SiC
0	0	15	15	0	0	MAX
50	0	10-15	10-15	0	0	MAX
100	0	10	10	3	0	MAX
150	0	5-10	5-10	3	0	MAX
200	3-5	5-10	10	3	0	MAX
250	1-3	3	10	1-3	3-5	MAX
300	5	5	5	3-5	0	MAX

Table 3 Chemical composition of samples after different oxidation durations /mass%

Duration /h	Si₃N₄	SiC	SiO₂
150	18.95	67.56	9.56
300	19.78	65.89	10.61

Fig. 5 Microstructure of original sample

Fig. 6 Microstructure of sample after 50 h oxidation

Fig. 7 Microstructure of sample after 300 h oxidation

Fig. 8 Pore size distribution of samples after 300 h oxidation

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Research on Steam Oxidation Resistance of Si₃N₄-bonded SiC Refractories

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