Fabrication and Pressureless Sintering of Silicon Carbide Refractories

doi:10.19691/j.cnki.1004-4493.2021.04.008

China's Refractories ›› 2021, Vol. 30 ›› Issue (4): 40-44.DOI: 10.19691/j.cnki.1004-4493.2021.04.008

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Fabrication and Pressureless Sintering of Silicon Carbide Refractories

GUO Junhua, WANG Wenwu, CAO Huiyan, XU Haiyang

Sinosteel Luoyang Institute of Refractories Research Co., Ltd., Luoyang 471039, China

Online:2021-12-15 Published:2021-12-10
About author:Guo Junhua got her bachelor’s degree and master’s degree from Henan Polytechnic University and Sinosteel Luoyang Institute of Refractories Research (LIRR) in 2007 and 2014, respectively. After her graduation, She works in the Import & Export Department, Sinosteel LIRR as a sales manager, responsible for the import of raw materials and the sales and market developing of refractories overseas; she also undertakes the platform construction and product promotion in Alibaba international website as well as the SiC tiles sales to Europe market.

Abstract

Abstract:

This work studies the fabrication and pressureless sintering of silicon carbide (SiC) refractories. SiC particles were adopted as aggregates, introducing different amounts (20%, 30%, 40%, 50%, and 60%, by mass) of submicron SiC powder, adding resin as the binder and the carbon source, and B₄C as the sintering aid. It is found that when the mass ratio of B₄C to the submicron SiC powder is 3%, the optimal sintering can be obtained. With the increase of the submicron powder addition, the sintering linear shrinkage increases and the mechanical properties enhance. The optimal sintering temperature is 2 050-2 100 ℃.

Key words: silicon carbide refractories, submicron silicon carbide powder, pressureless sintering

GUO Junhua, WANG Wenwu, CAO Huiyan, XU Haiyang. Fabrication and Pressureless Sintering of Silicon Carbide Refractories[J]. China's Refractories, 2021, 30(4): 40-44.

Figures/Tables 11

Table 1 Chemical composition and pH value of submicron SiC powder /mass%

SiC	Fe₂O₃	F.C	SiO₂	pH	Moisture
98.5	0.025	0.15	0.15	7	0.2

Table 2 Experiment formulations /mass%

Samples	B0	B1	B2	B3	B4	S2	S3	S4	S5	S6
SiC particle	70	70	70	70	70	80	70	60	50	40
Submicron SiC powder	30	30	30	30	30	20	30	40	50	60
B₄C (extra-adding)	0	0.3	0.6	0.9	1.2	0.6	0.9	1.2	1.5	1.8
Resin (extra-adding)	6	6	6	6	6	4.4	6	6.5	7	7.5

Fig. 1 Influence of B4C addition on properties of samples

Fig. 2 Bulk density as a function of submicron SiC powder addition

Fig. 3 Linear shrinkage rate as a function of submicron SiC powder addition

Fig. 4 Apparent porosity and bulk density as a function of submicron SiC powder addition

Fig. 5 Cold compressive strength as a function of submicron SiC powder addition

Fig. 6 Section morphology of sintered samples S3 and S5

Fig. 7 Linear shrinkage rate and bulk density as a function of sintering temperature

Fig. 8 Cold compressive strength as a function of sintering temperature

Fig. 9 Fracture structure of sample S3 sintered at different temperatures

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[1]	MA Beiyue, LI Ying, LU Zhongxin, YU jingkun. Preparation of ZrN(ZrON)-SiAlON Composite Ceramics via a Pressureless Sintering Process [J]. , 2014, 23(4): 45-48.
[2]	WANG Huifang, ZHANG Xijun, BI Yubao. Effect of Nano-Al2O3 on Mechanical Properties and Microstructure [J]. , 2014, 23(2): 18-22.

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Fabrication and Pressureless Sintering of Silicon Carbide Refractories

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